According to Anxin, the world's first 8-inch silicon thin film lithium niobate optoelectronic integrated wafer has been successfully produced. This innovative achievement adopts the bonding technology of 8-inch SOI silicon wafer and 8-inch lithium niobate wafer, achieving single-chip integrated optoelectronic transceiver function, which can be regarded as the most advanced level of global silicon-based compound optoelectronic integration technology.
This achievement has the characteristics of ultra-low loss and ultra-high bandwidth, and can be used for the large-scale manufacturing of high-end optical chips, making it one of the most comprehensive optoelectronic integrated chips in the world at present. This achievement is jointly developed by Jiufengshan Laboratory and important industrial partners, and is expected to be put into the industrial application of Anxin Mall - Electronic Component Online Procurement Platform as soon as possible.
In recent years, the electronic component spot network Anxin network electronic component online procurement platform and photon integration technology have been strongly promoted by industries such as 5G communication, big data, and artificial intelligence. Lithium niobate, as an ideal photonic integrated material, has attracted much attention due to its large transparent window, low transmission loss, good physical properties such as optoelectronic\/piezoelectric\/nonlinear properties, and excellent mechanical stability. Single crystal thin film lithium niobate is considered the optimal solution to address the long-standing low transmission loss, high-density integration, and low modulation power consumption requirements in the field of photonic integrated chips.